اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTransport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport
163
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer molybdenum disulfide nanoflakes and contributes to the development of next-generation molybdenum disulfide based devices.
قيم البحث
اقرأ أيضاً
We study the dynamics of Dirac and Weyl electrons in disordered point-node semimetals. The ballistic feature of the transport is demonstrated by simulating the wave-packet dynamics on lattice models. We show that the ballistic transport survives unde
r a considerable strength of disorder up to the semimetal-metal transition point, which indicates the robustness of point-node semimetals against disorder. We also visualize the robustness of the nodal points and linear dispersion under broken translational symmetry. The speed of the wave packets slows down with increasing disorder strength, and vanishes toward the critical strength of disorder, hence becoming the order parameter. The obtained critical behavior of the speed of the wave packets is consistent with that predicted by the scaling conjecture.
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challeng
ing. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of
charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nat
ure of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach.
We investigate the transition induced by disorder in a periodically-driven one-dimensional model displaying quantized topological transport. We show that, while instantaneous eigenstates are necessarily Anderson localized, the periodic driving plays
a fundamental role in delocalizing Floquet states over the whole system, henceforth allowing for a steady state nearly-quantized current. Remarkably, this is linked to a localization/delocalization transition in the Floquet states of a one dimensional driven Anderson insulator, which occurs for periodic driving corresponding to a nontrivial loop in the parameter space. As a consequence, the Floquet spectrum becomes continuous in the delocalized phase, in contrast with a pure-point instantaneous spectrum.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
