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The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation (PRO) and polarization reorientation (PRE) in piezoelectric single crystals can provide an effective strain in film/substrate epitaxial heterostructures. However, the specific pathway of PRO and PRE is a complex thermodynamic process, depending on chemical composition, temperature, electric field and mechanical load. Here, systematic studies of the temperature-dependent field-induced phase transitions in Pb(Mg,Nb)O3-PbTiO3 single crystals with different initial phase and orientation configurations have been performed. Different types of strains, volatile/nonvolatile and biaxial/uniaxial, have been measured by both macroscopic and in-situ X-ray diffraction techniques. In addition, the strain state of epitaxial Mn-doped CoFe2O4 thin films was examined by magnetic anisotropy measurements, where a giant magnetoelectric coupling has been demonstrated.
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which
Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense la
Epitaxial strain plays an important role in determining physical properties of perovskite ferroelectric oxide thin films. However, it is very challenging to directly measure properties such as polarization in ultrathin strained films using traditiona
TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragon
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via externa