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We revisit the physics of electron gas bilayers in the quantum Hall regime [Nature, 432 (2004) 691; Science, 305 (2004) 950], where transport and tunneling measurements provided evidence of a superfluid phase being present in the system. Previously, this behavior was explained by the possible formation of a BEC of excitons in the half-filled electron bilayers, where empty states play the role of holes. We discuss the fundamental difficulties with this scenario, and propose an alternative approach based on a treatment of the system as a pseudospin magnet. We show that the experimentally observed tunneling peak can be linked to the XY ferromagnet (FM) to Ising antiferromagnet (AFM) phase transition of the S=1/2 XXZ pseudospin model, driven by the change in total electron density. This transition is accompanied by a qualitative change in the nature of the low energy spin wave dispersion from a gapless linear mode in the XY-FM phase to a gapped, quadratic mode in the Ising-AFM phase.
We investigate a domain structure of pseudospins, a soliton lattice in the bilayer quantum Hall state at total Landau level filling factor $ u =1$, in a tilted magnetic field, where the pseudospin represents the layer degree of freedom. An anomalous
The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced phase trans
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the Integer Quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignm
Resistively Detected Nuclear Magnetic Resonance (RD-NMR) has been used to investigate a two-subband electron system in a regime where quantum Hall pseudo-spin ferromagnetic (QHPF) states are prominently developed. It reveals that the easy-axis QHPF s
Pseudospin solitons in double-layer quantum Hall systems can be introduced by a magnetic field component coplanar with the electrons and can be pinned by applying voltages to external gates. We estimate the temperature below which depinning occurs pr