اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدAnomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature
169
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.
قيم البحث
اقرأ أيضاً
The low-temperature Hall resistivity rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respective
ly. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holsteins model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.
The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The realization
of the quantum anomalous Hall effect provided conclusive evidence for the intrinsic mechanism of the AH effect in magnetic topological insulators (TIs). Here we fabricated magnetic TI/TI heterostructures and found both the magnitude and sign of the AH effect in the magnetic TI layer can be altered by tuning the TI thickness and/or the electric gate voltage. The sign change of the AH effect with increasing TI thickness is attributed to the charge transfer across the TI and magnetic TI layers, consistent with first-principles calculations. By fabricating the magnetic TI/TI/magnetic TI sandwich heterostructures with different dopants, we created an artificial topological Hall (TH) effect-like feature in Hall traces. This artificial TH effect is induced by the superposition of two AH effects with opposite signs instead of the formation of chiral spin textures in the samples. Our study provides a new route to engineer the Berry curvature in magnetic topological materials that may lead to potential technological applications.
Nodal semimetals (e.g. Dirac, Weyl and nodal-line semimetals, graphene, etc.) and systems of pinned particles with power-law interactions (trapped ultracold ions, nitrogen defects in diamonds, spins in solids, etc.) are presently at the centre of att
ention of large communities of researchers working in condensed-matter and atomic, molecular and optical physics. Although seemingly unrelated, both classes of systems are abundant with novel fundamental thermodynamic and transport phenomena. In this paper, we demonstrate that low-energy field theories of quasiparticles in semimetals may be mapped exactly onto those of pinned particles with excitations which exhibit power-law hopping. The duality between the two classes of systems, which we establish, allows one to describe the transport and thermodynamics of each class of systems using the results established for the other class. In particular, using the duality mapping, we establish the existence of a novel class of disorder-driven transitions in systems with the power-law hopping $propto1/r^gamma$ of excitations with $d/2<gamma<d$, different from the conventional Anderson-localisation transition. Non-Anderson disorder-driven transitions have been studied broadly for nodal semimetals, but have been unknown, to our knowledge, for systems with long-range hopping (interactions) with $gamma<d$.
We present a calculation of the Hall coefficient in 2H-TaSe2 and 2H-Cu0.2NbS2 relied on the photoemission data and compare the results to transport observations. The approach, based on the solution of the semiclassical Boltzmann equation in the isotr
opic tau-approximation yields high-temperature Hall coefficient consistent with the one measured directly. Taking into account the opening of the pseudogap and redistribution of the spectral weight, recently observed in angle resolved photoemission spectra of 2H-TaSe2, allows us to reproduce the temperature dependence of the Hall coefficient including prominent sign change with no adjustable parameters.
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative mag
netoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as directed polymer problem even in the case of wave functions of random sign. We present numerical simulations which prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of magnetic field.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
