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Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.
The low-temperature Hall resistivity rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respective
The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The realization
Nodal semimetals (e.g. Dirac, Weyl and nodal-line semimetals, graphene, etc.) and systems of pinned particles with power-law interactions (trapped ultracold ions, nitrogen defects in diamonds, spins in solids, etc.) are presently at the centre of att
We present a calculation of the Hall coefficient in 2H-TaSe2 and 2H-Cu0.2NbS2 relied on the photoemission data and compare the results to transport observations. The approach, based on the solution of the semiclassical Boltzmann equation in the isotr
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative mag