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Non-planar solar-cell devices have been promoted as a means to enhance current collection in absorber materials with charge-transport limitations. This work presents an analytical framework for assessing the ultimate performance of non-planar solar-cells based on materials and geometry. Herein, the physics of the p-n junction is analyzed for low-injection conditions, when the junction can be considered spatially separable into quasi-neutral and space-charge regions. For the conventional planar solar cell architecture, previously established one-dimensional expressions governing charge carrier transport are recovered from the framework established herein. Space-charge region recombination statistics are compared for planar and non-planar geometries, showing variations in recombination current produced from the space-charge region. In addition, planar and non-planar solar cell performance are simulated, based on a semi-empirical expression for short-circuit current, detailing variations in charge carrier transport and efficiency as a function of geometry, thereby yielding insights into design criteria for solar cell architectures. For the conditions considered here, the expressions for generation rate and total current are shown to universally govern any solar cell geometry, while recombination within the space-charge region is shown to be directly dependent on the geometrical orientation of the p-n junction.
We report on very high enhancement of thin layers absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simula
Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on flexible substrates. Much progress has been made in recent years on a
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Photovoltaic effect, e.g., solar cells, converts light into DC electric current. This phenomenon takes place in various setups such as in noncentrosymmetric crystals and semiconductor pn junctions. Recently, we proposed a theory for producing DC spin