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A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position controlled nanowire quantum dot with a fidelity as high as 0.859 +/- 0.006 and concurrence of 0.80 +/- 0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single electron devices and light emitting diodes.
We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction achievable by
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The elect
A quantum dot can be used as a source of one- and two-photon states and of polarisation entangled photon pairs. The emission of such states is investigated from the point of view of frequency-resolved two-photon correlations. These follow from a spec
We consider two quantum dots described by the Anderson-impurity model with one electron per dot. The goal of our work is to study the decay of a maximally entangled state between the two electrons localized in the dots. We prepare the system in a per
We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-I