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We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ with a transition temperature ($T_{mathrm{c}}$) of 5.1 K.Tunneling spectra at 4.2 K (below $T_{mathrm{c}}$) and 22 K (above $T_{mathrm{c}}$) show a large spectroscopic gap ($sim$40 mV), which is inconsistent with the metallic nature demonstrated in bulk measurements. Moreover, we find two interesting real-space electronic features. The first feature is a `checkerboard stripe electronic state characterized by an alternating arrangement of two types of nanocluster. In one cluster, one-dimensional electronic stripes run along one Bi-Bi direction, whereas, in the other cluster, the stripes run along the other Bi-Bi direction. The second feature is a nanoscale electronic inhomogeneity whose microscopic source seems to be atomic defects on the cleaved surface or dopant F atoms.
Bulk magnetization, transport and neutron scattering measurements were performed to investigate the electronic and magnetic properties of a polycrystalline sample of the newly discovered ferromagnetic superconductor, CeO$_{0.3}$F$_{0.7}$BiS$_{2}$. Fe
NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ is a new layered superconductor. We have studied the low-lying electronic structure of a single crystalline NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ superconductor, whose superconducting transition temperature is 4.87K, with angle-
We measure the magnetic penetration depth $Deltalambda(T)$ for NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$ = 0.3 and 0.5) using the tunnel diode oscillator technique. The $Deltalambda(T)$ shows an upturn in the low-temperature limit which is attributed to the p
We present the main features of a home-built scanning tunneling microscope that has been attached to the mixing chamber of a dilution refrigerator. It allows scanning tunneling microscopy and spectroscopy measurements down to the base temperature of
Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi