ﻻ يوجد ملخص باللغة العربية
Broadband dielectric spectroscopy from Hz up to the infrared (IR) range and temperature interval 10-300 K was carried out for xBaZrO3-(1-x)BaTiO3 (BZT-x, x = 0.6, 0.7, 0.8) solid solution ceramics and compared with similar studies for x = 0, 0.2, 0.4, 1 ceramics published recently (Phys. Rev. B 86, 014106 (2012)). Rather complex IR spectra without appreciable mode softening are ascribed to Last-Slater transverse optic (TO) phonon eigenvector mixing and possible two-mode mixed crystal behavior. Fitting of the complete spectral range requires a relaxation in the 100 GHz range for all the samples. Below 1 GHz another relaxation appears, which is thermally activated and obeys the same Arrhenius behavior for all the relaxor BZT samples. The frequently reported Vogel-Fulcher behavior in BZT relaxors is shown to be an artifact of the evaluation from the permittivity or loss vs. temperature dependences instead of its evaluation from loss vs. frequency maxima. The relaxation is assigned to local hopping of the off-centered Ti4+ ions in the frozen BTO clusters, whose size is rather small and cannot grow on cooling. Therefore BZT is to be considered as a dipolar glass rather than relaxor ferroelectric.
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at par
Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric bilayer str
It has been considered that polar nanoregions in relaxors form at Burns temperature Td approx 600 K. High-temperature dielectric investigations of Pb(Mg1/3Nb2/3)O3 (PMN) and 0.7PMN-0.3PbTiO3 reveal, however, that the dielectric dispersion around 600
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching
Ferroelectric relaxors are complex materials with distinct properties. The understanding of their dielectric susceptibility, which strongly depends on both temperature and probing frequency, have interested researchers for many years. Here we report