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تسجيل مستخدم جديدSensor Compendium
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Sensors play a key role in detecting both charged particles and photons for all three frontiers in Particle Physics. The signals from an individual sensor that can be used include ionization deposited, phonons created, or light emitted from excitations of the material. The individual sensors are then typically arrayed for detection of individual particles or groups of particles. Mounting of new, ever higher performance experiments, often depend on advances in sensors in a range of performance characteristics. These performance metrics can include position resolution for passing particles, time resolution on particles impacting the sensor, and overall rate capabilities. In addition the feasible detector area and cost frequently provides a limit to what can be built and therefore is often another area where improvements are important. Finally, radiation tolerance is becoming a requirement in a broad array of devices. We present a status report on a broad category of sensors, including challenges for the future and work in progress to solve those challenges
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Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $> 200 m^2$ for the existing CMS trac
ker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than $200 m^2$ of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than $600 m^2$. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on $200 mm$ wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.
The foreseen luminosity upgrade for the LHC (a factor of 5-10 more in peak luminosity by 2021) poses serious constraints on the technology for the ATLAS tracker in this High Luminosity era (HL-LHC). In fact, such luminosity increase leads to increase
d occupancy and radiation damage of the tracking detectors. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project was established comprising 17 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edge designs to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. In the following I will present results from the group, concerning mainly irradiated-devices performance, together with studies for new sensors, including detailed simulations.
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas
to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut fur Technologie (KIT), Institut de Fisica dAltes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$Omega$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V.
Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow precision Higg
s measurements. It is critical to achieve low power consumption to minimize the material budget. This requires careful optimization of the sensor diode geometry to reach high charge-over-capacitance that allows reduction in analog power consumption. Methods: The electrode area and footprint are two critical elements in sensor diode geometry and have deciding impacts on the sensor charge collection performance. Prototype CMOS pixel sensor JadePix-1 has been developed with pixel sectors implementing different electrode area and footprint and their charge collection performance has been characterized with radioactive resources. Results: Charge-to-voltage conversion gains are calibrated with low energy X-ray. Noise, charge collection efficiency, charge-over-capacitance and signal-to-noise ratio are obtained for pixel sectors of different electrode area and footprint. Conclusion: Small electrode area and large footprint are preferred to achieve high charge-over-capacitance that promises low analog power consumption. Ongoing studies on sensor performance before and after irradiation, combined with this work, will conclude on the diode geometry optimization.
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silico
n oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.
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