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We demonstrate a canted magnetization of biatomic zigzag Co chains grown on the 5 x 1 reconstructed Ir(001) surface using density functional theory calculations and spin-polarized scanning tunneling microscopy (SP-STM) experiments. Biatomic Co chains grow in three different structural configurations and are all in a ferromagnetic state. Two chain types possess high symmetry due to two equivalent atomic strands and an easy magnetization direction which is along one of the principal crystallographic axes. The easy magnetization axis of the zigzag Co chains is canted away from the surface normal by an angle of 33 degrees. This giant effect is caused by the broken chain symmetry on the substrate in combination with the strong spin-orbit coupling of Ir. SP-STM measurements confirm stable ferromagnetic order of the zigzag chains with a canted magnetization.
Band-inverted electron-hole bilayers support quantum spin Hall insulator and exciton condensate phases. We investigate such a bilayer in an external magnetic field. We show that the interlayer correlations lead to formation of a helical quantum Hall
Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in
We point out that in the deep band-inverted state, topological insulators are generically vulnerable against symmetry breaking instability, due to a divergently large density of states of 1D-like exponent near the chemical potential. This feature at
Nonreciprocal devices that permit wave transmission in only one direction are indispensible in many fields of science including, e.g., electronics, optics, acoustics, and thermodynamics. Manipulating phonons using such nonreciprocal devices may have
Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) i