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We present a perturbative approach to derive the semiclassical equations of motion for the two-dimensional electron dynamics under the simultaneous presence of static electric and magnetic fields, where the quantized Hall conductance is known to be directly related to the topological properties of translationally invariant magnetic Bloch bands. In close analogy to this approach, we develop a perturbative theory of two-dimensional photonic transport in gyrotropic photonic crystals to mimic the physics of quantum Hall systems. We show that a suitable permittivity grading of a gyrotropic photonic crystal is able to simulate the simultaneous presence of analog electric and magnetic field forces for photons, and we rigorously derive the topology-related term in the equation for the electromagnetic energy velocity that is formally equivalent to the electronic case. A possible experimental configuration is proposed to observe a bulk photonic analog to the quantum Hall physics in graded gyromagnetic photonic crystals.
Quantum spin Hall (QSH) system can exhibit exotic spin transport phenomena, mediated by its topological edge states. Here a novel concept of bending strain engineering to tune the spin transport properties of a QSH system is demonstrated by both mode
We analyze the transport properties of bilayer quantum Hall systems at total filling factor $ u=1$ in drag geometries as a function of interlayer bias, in the limit where the disorder is sufficiently strong to unbind meron-antimeron pairs, the charge
We discover a new topological excitation of two dimensional electrons in the quantum Hall regime. The strain dependence of resistivity is shown to change sign upon crossing filling-factor-specified boundaries of reentrant integer quantum Hall effect
We investigate minimal excitation states for heat transport into a fractional quantum Hall system driven out of equilibrium by means of time-periodic voltage pulses. A quantum point contact allows for tunneling of fractional quasi-particles between o
We report the observation of quantum Hall effect (QHE) in a Bi$_2$Se$_3$ single crystal having carrier concentration ($n$) $sim1.13times10^{19}$cm$^{-3}$, three dimensional Fermi surface and bulk transport characteristics. The plateaus in Hall resist