ترغب بنشر مسار تعليمي؟ اضغط هنا

Structural and Electronic properties of cubic (GaN)$_1$/(ZnO)$_1$ superlattice: Modified Becke-Johnson exchange potential

81   0   0.0 ( 0 )
 نشر من قبل R\\'eda Boufatah
 تاريخ النشر 2013
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The structural and electronic properties of new structural cubic (GaN)$_1$/(ZnO)$_1$ superlattice have been investigated using two different theoretical techniques: the full potential-linearized augmented plane wave (FP-LAPW) method and the linear combination of localized pseudo atomic orbital (LCPAO). The new modified Becke-Johnson (mBJ) exchange potential is chosen to improve the bandgap of the superlattice and effective masses. The bandgap is found to be slightly indirect and reduced from those of pure GaN and ZnO. The origin of this reduction is attributed to the $p-d$ repulsion of the Zn-N interface and the presence of the O $p$ electron. The electron effective mass is found to be isotropic. Good agreement is obtained between two used methods and with available theoretical and experimental data.



قيم البحث

اقرأ أيضاً

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have available to compute band gaps are either inaccurate, computationally expensive, or only applicable to bulk systems. Here we show that reliable band structures of nanostructured systems can now be efficiently calculated using density-functional theory with the local modified Becke-Johnson exchange-correlation functional that we recently proposed. After re-optimizing the parameters of this functional specifically for two-dimensional materials, we show, for a test set of almost 300 systems, that the obtained band gaps are of comparable quality as those obtained using the best hybrid functionals, but at a very reduced computational cost. These results open the way for accurate high-throughput studies of band-structures of two-dimensional materials and for the study of van der Waals heterostructures with large unit cells.
The interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated through molecular beam epitaxy, are thoroughly investigated. X-ray diffraction and (scanning) transmission electron microscopy reveal that, at the substrate temperat ure above 200 degree C, the growth follows the single [0001] direction; while at the substrate below 150 degree C, the growth is initially along [0001] and then mainly changes to [0-332] variants beyond the thickness of about 10 nm. Interestingly, a double-domain feature with a rotational angle of 30 degree appears for the growth along [0001] regardless of the growth temperature, experimentally demonstrated the theoretical predictions for occurrence of double rotational domains in such a heteroepitaxy [Grundmann et al, Phys. Rev. Lett. 105, 146102 (2010)]. It is also found that, the optical transmissivity of the ZnO film is greatly influenced by the mutation of growth directions, stimulated by the bond-length modulations, as further determined by X-ray absorption Spectra (XAS) at Zn K edge. The XAS results also show the evolution of 4pxy and 4pz states in the conduction band as the growth temperature increases. The results obtained from this work can hopefully promote the applications of ZnO in advanced optoelectronics for which its integration with other materials of different phases is desirable.
First principles study of structural, elastic, and electronic properties of the cubic perovskitetype BaHfO$_3$ has been performed using the plane wave ultrasoft pseudo-potential method based on density functional theory with revised Perdew-Burke-Ernz erhof exchange-correlation functional of the generalized gradient approximation (GGA-RPBE). The calculated equilibrium lattice constant of this compound is in good agreement with the available experimental and theoretical data reported in the literatures. The independent elastic constants (emph{C}$_{11}$, emph{C}$_{12}$, and emph{C}$_{44}$), bulk modules emph{B} and its pressure derivatives $B^{prime}$, compressibility $beta$, shear modulus emph{G}, Youngs modulus emph{Y}, Poissons ratio $ u$, and Lam{e} constants ($mu, lambda$) are obtained and analyzed in comparison with the available theoretical and experimental data for both the singlecrystalline and polycrystalline BaHfO$_3$. The band structure calculations show that BaHfO$_3$ is a indirect bandgap material (R-$Gamma$ = 3.11 eV) derived basically from the occupied O 2emph{p} and unoccupied Hf 5emph{d} states, and it still awaits experimental confirmation. The density of states (total, site-projected, and emph{l}-decomposed) and the bonding charge density calculations make it clear that the covalent bonds exist between the Hf and O atoms and the ionic bonds exist between the Ba atoms and HfO$_3$ ionic groups in BaHfO$_3$. From our calculations, it is shown that BaHfO$_3$ should be promising as a candidate for synthesis and design of superhard materials due to the covalent bonding between the transition metal Hf 5emph{d} and O 2emph{p} states.
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-ba nd k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.
The presence in the graphyne sheets of a variable amount of sp2/sp1 atoms, which can be transformed into sp3-like atoms by covalent binding with one or two fluorine atoms, respectively, allows one to assume the formation of fulorinated graphynes (flu orographynes) with variable F/C stoichiometry. Here, employing DFT band structure calculations, we examine a series of fluorographynes, and the trends in their stability, structural and electronic properties have been discussed as depending on their stoichiometry: from C2F3 (F/C= 1.5) to C4F7 (F/C= 1.75).
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا