اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMicrowave-assisted switching of a nanomagnet: analytical determination of the optimal microwave field
53
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We analytically determine the optimal microwave field that allows for the magnetization reversal of a nanomagnet modeled as a macrospin. This is done by minimizing the total injected energy. The results are in good agreement with the fields obtained numerically using the optimal control theory. For typical values of the damping parameter, a weak microwave field is sufficient to induce switching through a resonant process. The optimal field is orthogonal to the magnetization direction at any time and modulated both in amplitude and frequency. The dependence of the pulse shape on the applied field and damping parameter is interpreted. The total injected energy is found to be proportionnal to the energy barrier between the initial state and the saddle point and to the damping parameter. This result may be used as a means for probing the damping parameter in real nanoparticles.
قيم البحث
اقرأ أيضاً
We develop an efficient and general method for optimizing the microwave field that achieves magnetization switching with a smaller static field. This method is based on optimal control and renders an exact solution for the 3D microwave field that tri
ggers the switching of a nanomagnet with a given anisotropy and in an oblique static field. Applying this technique to the particular case of uniaxial anisotropy, we show that the optimal microwave field, that achieves switching with minimal absorbed energy, is modulated both in frequency and in magnitude. Its role is to drive the magnetization from the metastable equilibrium position towards the saddle point and then damping induces the relaxation to the stable equilibrium position. For the pumping to be efficient, the microwave field frequency must match at the early stage of the switching process the proper precession frequency of the magnetization, which depends on the magnitude and direction of the static field. We investigate the effect of the static field (in amplitude and direction) and of damping on the characteristics of the microwave field. We have computed the switching curves in the presence of the optimal microwave field. The results are in qualitative agreement with micro-SQUID experiments on isolated nanoclusters. The strong dependence of the microwave field and that of the switching curve on the damping parameter may be useful in probing damping in various nanoclusters.
The torque generated by the transfer of spin angular momentum from a spin-polarized current to a nanoscale ferromagnet can switch the orientation of the nanomagnet much more efficiently than a current-generated magnetic field, and is therefore in dev
elopment for use in next-generation magnetic random access memory (MRAM). Up to now, only DC currents and square-wave current pulses have been investigated in spin-torque switching experiments. Here we present measurements showing that spin transfer from a microwave-frequency pulse can produce a resonant excitation of a nanomagnet and lead to improved switching characteristics in combination with a square current pulse. With the assistance of a microwave-frequency pulse, the switching time is reduced and achieves a narrower distribution than when driven by a square current pulse alone, and this can permit significant reductions in the integrated power required for switching. Resonantly excited switching may also enable alternative, more compact MRAM circuit architectures.
We report the storage and retrieval of a small microwave field from a superconducting resonator into collective excitations of a spin ensemble. The spins are nitrogen-vacancy centers in a diamond crystal. The storage time of the order of 30 ns is lim
ited by inhomogeneous broadening of the spin ensemble.
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to decoheren
ce. Here, we use terahertz Scanning Near-field Optical Microscopy (SNOM) to probe the local dielectric properties and carrier concentrations of wet-etched aluminum resonators on silicon, one of the most characteristic components of the superconducting quantum processors. Using a recently developed vector calibration technique, we extract the THz permittivity from spectroscopy in proximity to the microwave feedline. Fitting the extracted permittivity to the Drude model, we find that silicon in the etched channel has a carrier concentration greater than buffer oxide etched silicon and we explore post-processing methods to reduce the carrier concentrations. Our results show that near-field THz investigations can be applied to quantitatively evaluate and identify potential loss channels in quantum devices.
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investi
gate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
