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In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1mu m < lambda < 1.3 mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 mu eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat at up to
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 11
Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has
Systems of photonic crystal cavities coupled to quantum dots are a promising architecture for quantum networking and quantum simulators. The ability to independently tune the frequencies of laterally separated quantum dots is a crucial component of s
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity