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A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.
The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous distribut
The original Shockley-Read-Hall recombination statistics is extended to include recombination of localized excitations. The recombination is treated as a bimolecular process rather than a monomolecular recombination of excitons. The emphasis is place
In a recent letter, it has been predicted within first principle studies that Mn-doped ZrO2 compounds could be good candidate for spintronics application because expected to exhibit ferromagnetism far beyond room temperature. Our purpose is to addres
This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnet
We probe charge photogeneration and subsequent recombination dynamics in neat regioregular poly(3-hexylthiophene) films over six decades in time by means of time-resolved photoluminescence spectroscopy. Exciton dissociation at 10K occurs extrinsicall