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Spatially inhomogeneous strains in graphene can simulate the effects of valley-dependent magnetic fields. As demonstrated in recent experiments, the realizable magnetic fields are large enough to give rise to well-defined flat pseudo-Landau levels, potentially having counter-propagating edge modes. In the present work we address the conditions under which such edge modes are visible. We find that, whereas armchair edges do not support counter-propagating edge modes, zigzag edges do so, through a novel selective-hybridization mechanism. We then discuss effects of interactions on the stability of counter-propagating edge modes, and find that, for the experimentally relevant case of Coulomb interactions, interactions typically decrease the stability of the edge modes. Finally, we generalize our analysis to address the case of spontaneous valley polarization, which is expected to occur in charge-neutral strained graphene.
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge
The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is complemented with e
We report the realization of a synthetic magnetic field for photons and polaritons in a honeycomb lattice of coupled semiconductor micropillars. A strong synthetic field is induced in both the s and p orbital bands by engineering a uniaxial hopping g
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geome
We theoretically study electronic properties of a graphene sheet on xy plane in a spatially nonuniform magnetic field, $B = B_0 hat{z}$ in one domain and $B = B_1 hat{z}$ in the other domain, in the quantum Hall regime and in the low-energy limit. We