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Single crystals of LaFeAsO were successfully grown out of KI flux. Temperature dependent electrical resistivity was measured with current flow along the basal plane, rho_perpend(T), as well as with current flow along the crystallographic c-axis, rho_parallel(T), the latter one utilizing electron beam lithography and argon ion beam milling. The anisotropy ratio was found to lie between rho_parallel/rho_perpend = 20 - 200. The measurement of rho_perpend(T) was performed with current flow along the tetragonal [1 0 0] direction and along the [1 1 0] direction and revealed a clear in-plane anisotropy already at T leq 175 K. This is significantly above the orthorhombic distortion at T_0 = 147 K and indicates the formation of an electron nematic phase. Magnetic susceptibility and electrical resistivity give evidence for a change of the magnetic structure of the iron atoms from antiferromagnetic to ferromagnetic arrangement along the c-axis at T^ast = 11 K.
Orbital ordering has recently emerged as another important state in iron based superconductors, and its role for superconductivity as well as its connection to magnetic order and orthorhombic lattice distortion are heavily debated. In order to search
We expose the theoretical mechanisms underlying disorder-induced nematicity in systems exhibiting strong fluctuations or ordering in the nematic channel. Our analysis consists of a symmetry-based Ginzburg-Landau approach and associated microscopic ca
We present measurements of the thermal expansion coefficient alpha of polycrystalline LaFeAsO1-xFx (x <= 0.1). The magnetic and structural transitions of the samples with x <= 0.04 give rise to large anomalies in alpha(T), while the onset of supercon
This paper has been withdrawn by the authors due to errors in the X-ray diffraction data. Other measured data are not affected; however, the errors significantly change the interpretation and conclusions, and thus warrant withdrawal and later resubmission.
Anisotropic resistivities of Bi_2Sr_2Ca_{1-x}Er_xCu_2O_8 single crystals were measured and analyzed from 4.2 to 500 K with special interest in the parent antiferromagnetic insulator of x=1.0. Although the resistivity is semiconducting along both the