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The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the same time, limited by the memory requirements increasing with the number of atomic sites in the scattering region. Here we demonstrate how to achieve an accurate simulation of quantum transport feasible for experimentally sized bulk graphene heterojunctions at a strongly reduced computational cost. Without free tuning parameters, we show excellent agreement with a recent experiment on Klein backscattering [A. F. Young and P. Kim, Nature Phys. 5, 222 (2009)].
We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrodinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electros
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heteroju
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modula
We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_eapprox T$, the bath temperature). The method
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a compari