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Many of graphenes unique electronic properties emerge from its Dirac-like electronic energy spectrum. Similarly, it is expected that a nanophotonic system featuring Dirac dispersion will open a path to a number of important research avenues. To date, however, all proposed realizations of a photonic analog of graphene lack fully omnidirectional out-of-plane light confinement, which has prevented creating truly realistic implementations of this class of systems. Here we report on a novel route to achieve all-dielectric three-dimensional photonic materials featuring Dirac-like dispersion in a quasi-two-dimensional system. We further discuss how this finding could enable a dramatic enhancement of the spontaneous emission coupling efficiency (the beta-factor) over large areas, defying the common wisdom that the beta-factor degrades rapidly as the size of the system increases. These results might enable general new classes of large-area ultralow-threshold lasers, single-photon sources, quantum information processing devices and energy harvesting systems.
Graphene with honeycomb structure, being critically important in understanding physics of matter, exhibits exceptionally unusual half-integer quantum Hall effect and unconventional electronic spectrum with quantum relativistic phenomena. Particularly
The opening of a gap in single-layer graphene is often ascribed to the breaking of the equivalence between the two carbon sublattices. We show by angle-resolved photoemission spectroscopy that Ir- and Na-modified graphene grown on the Ir(111) surface
We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity
We report a 2mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequenc
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-di