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Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Gamma$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the effective mass of $Gamma$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Greens Function under the effective mass framework in the ballistic regime.
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al su
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained from an ex
We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accum
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk car
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. Howeve