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This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.
We report the development of a fast position-sensitive laser beam detector with a bandwidth that exceeds currently available detectors. The detector uses a fiber-optic bundle that spatially splits the incident beam, followed by a fast balanced photo-
The need for precise characterization of dual-phase xenon detectors has grown as the technology has matured into a state of high efficacy for rare event searches. The Michigan Xenon detector was constructed to study the microphysics of particle inter
A prototype of a position sensitive photo-detector with 5.6 x 5.6 cm2 detection area readout with 64 Hamamatsu MPPCs (S10931-100P) with 3 x 3 mm2 active area each has been built and tested. The photo-sensors are arranged in a 8 x 8 array with a quadr
An improved method of energy calibration of position-sensitive silicon detector is presented. Instead of the parabolic function used in traditional method, a new function describing the relation of position and energy is introduced and achieves bette
In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the E detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall