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RPdBi (R = Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x-ray diffraction, magnetic susceptibility, electrical resistivity, magnetoresistivity, thermoelectric power and Hall effect measurements, performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T. These ternaries, except diamagnetic YPdBi, exhibit localized magnetism of $R^{3+}$ ions, and order antiferromagnetically at low temperatures ($T_{N}$ = 2-13 K). The transport measurements revealed behavior characteristic of semimetals or narrow-band semiconductors. Both, electrons and holes contribute to the conductivity with dominant role of p-type carriers. The Hall effect of ErPdBi is strongly temperature and magnetic field dependent, reflecting complex character of the underlying electronic structures with multiple electron and hole bands. RPdBi, and especially DyPdBi, exhibit very good thermoelectric properties with a power factor coefficient $PF$ ranging from 6 to 20 $mu$Wcm$^{-1}$K$^{-2}$.
In this work, we construct a generalized Kane model with a new coupling term between itinerant electron spins and local magnetic moments of anti-ferromagnetic ordering in order to describe the low energy effective physics in a large family of anti-fe
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several epitaxial domai
We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann transport
We have performed magnetic susceptibility and neutron scattering measurements on polycrystalline Ag-In-RE (RE: rare-earth) 1/1 approximants. In the magnetic susceptibility measurements, for most of the RE elements, inverse susceptibility shows linear
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$leq$x$leq$1.0. The influence of Fe on the structural, electronic,