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Spin excitations of the correlated semiconductor FeSi probed by THz radiation

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 نشر من قبل Vladimir Glushkov
 تاريخ النشر 2011
  مجال البحث فيزياء
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By direct measurements of the complex optical conductivity $sigma( u)$ of FeSi we have discovered a broad absorption peak centered at frequency $ u_{0}(4.2 K) approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.

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