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A search for double beta processes in 190Pt and 198Pt was realized with the help of ultra-low background HP Ge 468 cm^3 gamma spectrometer in the underground Gran Sasso National Laboratories of the INFN (Italy). After 1815 h of data taking with 42.5 g platinum sample, T_{1/2} limits on 2beta processes in 190Pt (epsilonbeta^+ and 2epsilon) have been established on the level of 10^{14}-10^{16} yr, 3 to 4 orders of magnitude higher than those known previously. In particular, a possible resonant double electron capture in 190Pt was restricted on the level of 2.9 times 10^{16} yr at 90% C.L. In addition, T_{1/2} limit on 2 beta^- decay of 198Pt (2 u+0 u) to the 2^+_1 excited level of 198Hg has been set at the first time: T_{1/2}>3.5 times 10^{18} yr. The radiopurity level of the used platinum sample is reported.
A search for double $beta$ decay of dysprosium was realized for the first time with the help of an ultra low-background HP Ge $gamma$ detector. After 2512 h of data taking with a 322 g sample of dysprosium oxide limits on double beta processes in $^{
An experiment to search for double beta decay processes in 96Ru and 104Ru, which are accompanied by gamma rays, has been realized in the underground Gran Sasso National Laboratories of the I.N.F.N. (Italy). Ruthenium samples with masses of about (0.5
A search for double-beta decay of osmium has been realized for the first time with the help of an ultra-low background HPGe gamma detector at the underground Gran Sasso National Laboratories of the INFN (Italy). After 2741 h of data taking with a 173
The Standard Model of particle physics cannot explain the dominance of matter over anti-matter in our Universe. In many model extensions this is a very natural consequence of neutrinos being their own anti-particles (Majorana particles) which implies
GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diod