اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدQuantum Hall Effect in Thin Films of Three-Dimensional Topological Insulators
101
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We show that a thin film of a three-dimensional topological insulator (3DTI) with an exchange field is a realization of the famous Haldane model for quantum Hall effect (QHE) without Landau levels. The exchange field plays the role of staggered fluxes on the honeycomb lattice, and the hybridization gap of the surface states is equivalent to alternating on-site energies on the AB sublattices. A peculiar phase diagram for the QHE is predicted in 3DTI thin films under an applied magnetic field, which is quite different from that either in traditional QHE systems or in graphene.
قيم البحث
اقرأ أيضاً
Topological insulators in three dimensions are characterized by a Z2-valued topological invariant, which consists of a strong index and three weak indices. In the presence of disorder, only the strong index survives. This paper studies the topologica
l invariant in disordered three-dimensional system by viewing it as a super-cell of an infinite periodic system. As an application of this method we show that the strong index becomes non-trivial when strong enough disorder is introduced into a trivial insulator with spin-orbit coupling, realizing a strong topological Anderson insulator. We also numerically extract the gap range and determine the phase boundaries of this topological phase, which ?ts well with those obtained from self-consistent Born approximation (SCBA) and the transport calculations.
The chiral hinge modes are the key feature of a second order topological insulator in three dimensions. Here we propose a quadrupole index in combination of a slab Chern number in the bulk to characterize the flowing pattern of chiral hinge modes alo
ng the hinges at the intersection of the surfaces of a sample. We further utilize the topological field theory to demonstrate the correspondent connection of the chiral hinge modes to the quadrupole index and the slab Chern number, and present a picture of three-dimensional quantum anomalous Hall effect as a consequence of chiral hinge modes. The two bulk topological invariants can be measured in electric transport and magneto-optical experiments. In this way we establish the bulk-hinge correspondence in a three-dimensional second order topological insulator.
The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetot
ransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices.
Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here we
report experimental demonstration of transition from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually positive magnetoconductivity emerges when the electron system becomes strongly localized. This works reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.
Inside a three-dimensional strong topological insulator, a tube with $h/2e$ magnetic flux carries a pair of protected one-dimensional linear fermionic modes. This phenomenon is known as the wormhole effect. In this work, we find that the wormhole eff
ect, as a unique degree of freedom, introduces exotic transport phenomena and thus manipulates the transport properties of topological insulators. Our numerical results demonstrate that the transport properties of a double-wormhole system can be manipulated by the wormhole interference. Specifically, the conductance and local density of states both oscillate with the Fermi energy due to the interference between the wormholes. Furthermore, by studying the multi-wormhole systems, we find that the number of wormholes can also modulate the differential conductance through a $mathbb{Z}$$_{2}$ mechanism. Finally, we propose two types of topological devices in real applications, the wormhole switch device and the traversable wormhole device, which can be finely tuned by controlling the wormhole degree of freedom.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
