ﻻ يوجد ملخص باللغة العربية
We derive analytical expressions for the conductivity of bilayer graphene (BLG) using the Boltzmann approach within the the Born approximation for a model of Gaussian disorders describing both short- and long-range impurity scattering. The range of validity of the Born approximation is established by comparing the analytical results to exact tight-binding numerical calculations. A comparison of the obtained density dependencies of the conductivity with experimental data shows that the BLG samples investigated experimentally so far are in the quantum scattering regime where the Fermi wavelength exceeds the effective impurity range. In this regime both short- and long-range scattering lead to the same linear density dependence of the conductivity. Our calculations imply that bilayer and single layer graphene have the same scattering mechanisms. We also provide an upper limit for the effective, density dependent spatial extension of the scatterers present in the experiments.
The conductivity of armchair graphene nanoribbons in the presence of short-range impurities and edge roughness is studied theoretically using the Boltzmann transport equation for quasi-one-dimensional systems. As the number of occupied subbands incre
A Drude-Boltzmann theory is used to calculate the transport properties of bilayer graphene. We find that for typical carrier densities accessible in graphene experiments, the dominant scattering mechanism is overscreened Coulomb impurities that behav
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analy
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphen