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We have theoretically investigated the properties of electronic transport in graphene heterostructures, which are consisted of two different graphene superlattices with one-dimensional periodic potentials. It is found that such heterostructures possess an unusual tunneling state occurring inside the original forbidden gaps, and the electronic conductance is greatly enhanced and Fano factor is strongly suppressed near the energy of the tunneling state. Finally we present the matching condition of the impedance of the pseudospin wave for occuring the tunneling state by using the Bloch-wave expansion method.
Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these
We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our appro
Finite graphene nanoribbon (GNR) heterostructures host intriguing topological in-gap states (Rizzo, D. J. et al.~textit{Nature} textbf{2018}, textit{560}, 204]). These states may be localized either at the bulk edges, or at the ends of the structure.
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectr
The specific rotational alignment of two-dimensional lattices results in a moire superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of