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Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hz bandwidth can be reached.
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with con
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dim
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to de
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibriu
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control ove