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This review will deal with several types of free charge localisation in oxides and their consequences on the effective dielectric spectra of such materials. The first one is the polaronic localisation at the unit cell scale on residual impurities in ferroelectric networks. The second one is the collective localisation of free charge at macroscopic interfaces like surfaces, electrodes and grain boundaries in ceramics. Polarons have been observed in many oxide perovskites mostly when cations having several stable electronic configurations are present. In manganites, the density of such polarons is so high as to drive a net lattice of interacting polarons. On the other hand, in ferroelectric materials like BaTiO3 and LiNbO3, the density of polarons is usually very small but they can influence strongly the macroscopic conductivity. The contribution of such polarons to the dielectric spectra of ferroelectric materials is described. Even residual impurities as for example Iron can induce well defined anomalies at very low temperatures. This is mostly resulting from the interaction between localised polarons and the highly polarisable ferroelectric network in which they are embedded. The case of such residual polarons in SrTiO3 will be described in more details, emphasizing the quantum polaron state at liquid helium temperatures. Recently, several non-ferroelectric oxides have been shown to display giant effective dielectric permittivity. It is first shown that the frequency/temperature behaviour of such parameters is very similar in very different compounds (donor doped BaTiO3, CaCu3Ti4O12, LuFe2O4,Li doped NiO,...). This similarity calls for a common origin of the giant dielectric permittivity in these compounds. A space charge localisation at macroscopic interfaces can be the key for such extremely high dielectric permittivity.
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thic
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 indu
{it Ab initio} investigations of the full static dielectric response and Born effective charge of BN nanotubes (BN-NTs) have been performed for the first time using finite electric field method. It is found that the ionic contribution to the static d
Present work demonstrates the formation of spin-orbital polarons in electron doped copper oxides, that arise due to doping-induced polarisation of the oxygen orbitals in the CuO$_2$ planes. The concept of such polarons is fundamentally different from
The development of high performance transparent conducting oxides (TCOs) is critical to many technologies from transparent electronics to solar cells. While n-type TCOs are present in many devices, current p-type TCOs are not largely commercialized a