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Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently, the photovoltaic effects of a heterojunction structure embedded with few layer graphene (FLG) have been demonstrated. Here, we report the photovoltaic response of graphene-semiconductor junctions and the controlled open-circuit voltage (Voc) with varying numbers of graphene layers. After unavoidably adsorbed contaminants were removed from the FLGs, by means of in situ annealing, prepared by layer-by-layer transfer of the chemically grown graphene layer, the work functions of FLGs showed a sequential increase as the graphene layers increase, despite of random interlayer-stacking, resulting in the modulation of photovoltaic behaviors of FLGs/Si interfaces. The surface photovoltaic effects observed here show an electronic realignment in the depth direction in the FLG heterojunction systems, indicating future potential toward solar devices utilizing the excellent transparency and flexibility of FLG.
Fundamental electronic processes such as charge-carrier transport and recombination play a critical role in determining the efficiency of hybrid perovskite solar cells. The presence of mobile ions complicates the development of a clear understanding
There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caus
Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active la
Organic Photovoltaic devices (OPVs) are becoming adequately cost and energy efficient to be considered a good investment and it is, therefore, especially important to have a concrete understanding of their operation. We compute energies of charge-tra
Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces,