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تسجيل مستخدم جديدConversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation
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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a functio
n of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.
The dependence of the luminescence of diamonds with negatively charged nitrogen-vacancy centers (NV-) vs. applied magnetic field (magnetic spectrum) was studied. A narrow line in zero magnetic field was discovered. The properties of this line are con
siderably different from those of other narrow magnetic spectrum lines. Its magnitude is weakly dependent of the orientation of the single-crystal sample to the external magnetic field. This line is also observed in a powdered sample. The shape of the line changes greatly when excitation light polarization is varied. The magnitude of the line has a non-linear relation to excitation light intensity. For low intensities this dependence is close to a square law. To explain the mechanism giving rise to this line in the magnetic spectrum, we suggest a model based on the dipole-dipole interaction between different NV- centers.
Near-surface nitrogen-vacancy (NV) centers have been created in diamond through low energy implantation of 15N to sense electron spins that are external to the diamond. By performing double resonance experiments, we have verified the presence of g=2
spins on a diamond crystal that was subjected to various surface treatments, including coating with a polymer film containing the free radical 2,2-diphenyl-1-picrylhydrazyl (DPPH). Subsequent acid cleaning eliminated the spin signal without otherwise disrupting the NV center, providing strong evidence that the spins were at the surface. A clear correlation was observed between the size of the detected spin signal and the relaxation time T2 for the six NV centers studied. We have developed a model that takes into account the finite correlation time of the fluctuating magnetic fields generated by the external spins, and used it to infer the signal strength and correlation time of the magnetic fields from these spins. This model also highlights the sensitivity advantage of active manipulation of the longitudinal spin component via double resonance over passive detection schemes that measure the transverse component of spin.
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are formed fro
m substitutional nitrogen (P1 centers) defects and vacancies in the diamond lattice. Maximizing the concentration of NVs is most beneficial, which justifies the search for methods with a high yield of conversion from P1 to NV$^-$. We report here the characterization of surface cleaned fluorescent micro- and nanodiamonds, obtained by irradiation of commercial diamond powder with high-energy (10 MeV) electrons and simultaneous annealing at 800{deg}C. Using this technique and increasing the irradiation dose, we demonstrate the creation of NV$^-$ with up to 25 % conversion yield. Finally, we monitor the creation of irradiation-induced spin-1 defects in microdiamond particles, which we associate with W16 and W33 centers, and investigate the effects of irradiation dose and particle size on the coherence time of NV$^-$.
We use magnetic-field-dependent features in the photoluminescence of negatively charged nitrogen-vacancy centers to measure magnetic fields without the use of microwaves. In particular, we present a magnetometer based on the level anti-crossing in th
e triplet ground state at 102.4 mT with a demonstrated noise floor of 6 nT/$sqrt{text{Hz}}$, limited by the intensity noise of the laser and the performance of the background-field power supply. The technique presented here can be useful in applications where the sensor is placed closed to conductive materials, e.g. magnetic induction tomography or magnetic field mapping, and in remote-sensing applications since principally no electrical access is needed.
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