اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPiezoresistance in chemically synthesized polypyrrole thin films
322
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The resistance of chemically synthesized polypyrrole (PPy) thin films is investigated as a function of the pressure of various gases as well as of the film thickness. A physical, piezoresistive response is found to coexist with a chemical response if the gas is chemically active, like, e.g., oxygen. The piezoresistance is studied separately by exposing the films to the chemically inert gases such as nitrogen and argon. We observe that the character of the piezoresistive response is a function not only of the film thickness, but also of the pressure. Films of a thickness below 70 nm show a decreasing resistance as pressure is applied, while for thicker films, the piezoresistance is positive. Moreover, in some films of thickness of about 70 nm, the piezoresistive response changes from negative to positive as the gas pressure is increased above 500 mbars. This behavior is interpreted in terms of a total piezoresistance which is composed of a surface and a bulk component, each of which contributes in a characteristic way. These results suggest that in polypyrrole, chemical sensing and piezoresistivity can coexist, which needs to be kept in mind when interpreting resistive responses of such sensors.
قيم البحث
اقرأ أيضاً
The electronic transport in polypyrrole thin films synthesized chemically from the vapor phase is studied as a function of temperature as well as of electric and magnetic fields. We find distinct differences in comparison to the behavior of both poly
pyrrole films prepared by electrochemical growth as well as of the bulk films obtained from conventional chemical synthesis. For small electric fields F, a transition from Efros-Shklovskii variable range hopping to Arrhenius activated transport is observed at 30 K. High electric fields induce short range hopping. The characteristic hopping distance is found to be proportional to F^(-1/2). The magnetoresistance R(B) is independent of F below a critical magnetic field, above which F counteracts the magnetic field induced localization.
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external pertur
bations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of inducing a five orders of magnitude change in the room temperature resistivity of Sr2IrO4. The extreme sensitivity of the electronic structure to anisotropic deformations opens up a new angle of interest on this material, and the giant and fully reversible perpendicular piezoresistance makes iridates a promising material for room temperature piezotronic devices.
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures
could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a motion of the ferroelectric domain through a random medium, and we showed that the local field variation due to dipole defects at domain pinning sites could explain the intriguing distribution.
Molecular systems are materials that intersect with many different promising fields such as organic/molecular electronics and spintronics, organic magnetism and quantum computing1-7. Particularly, magnetism in organic materials is very intriguing: th
e possibility to realize long-range magnetic order in completely metal-free systems means that magnetic moments are coupled to useful properties of organic materials, such as optical transparency, low-cost fabrication, and flexible chemical design. Magnetic ordering in light elements, such as nitrogen and carbon, has been studied in magnetic-edged graphene nanoribbons8 and bilayers9, and polymers10 while in organic thin films most of the investigations show this effect as due to the proximity of light atoms to heavy metals, impurities, or vacancies11. Purely organic radicals are molecules that carry one unpaired electron giving rise to a permanent magnetic moment, in the complete absence of metal ions.12-14 Inspired by their tremendous potential, here we investigate thin films of an exceptionally chemically stable Blatter radical derivative15 by using X-ray magnetic circular dichroism (XMCD)16-18. Here we observe XMCD at the nitrogen K-edge. Our results show a magnetic ordering different than in the single crystals and calculations indicate, although weak, a long-range intermolecular coupling. We anticipate our work to be a starting point for investigating and modelling magnetic behaviour in purely organic thin films. The tuning of the magnetic properties by the molecular arrangement in organic films is an exciting perspective towards revealing new properties and applications.
We study theoretically and numerically the bending-driven leveling of thin viscous films within the lubrication approximation. We derive the Greens function of the linearized thin-film equation and further show that it represents a universal self-sim
ilar attractor at long times. As such, the rescaled perturbation of the film profile converges in time towards the rescaled Greens function, for any summable initial perturbation profile. In addition, for stepped axisymmetric initial conditions, we demonstrate the existence of another, short-term and one-dimensional-like self-similar regime. Besides, we characterize the convergence time towards the long-term universal attractor in terms of the relevant physical and geometrical parameters, and provide the local hydrodynamic fields and global elastic energy in the universal regime as functions of time. Finally, we extend our analysis to the non-linear thin-film equation through numerical simulations.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
