ترغب بنشر مسار تعليمي؟ اضغط هنا

Roughening and pinning of interface cracks in shear delamination of thin films

409   0   0.0 ( 0 )
 نشر من قبل Michael Zaiser
 تاريخ النشر 2009
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We investigate the roughening of shear cracks running along the interface between a thin film and a rigid substrate. We demonstrate that short-range correlated fluctuations of the interface strength lead to self-affine roughening of the crack front as the driving force (the applied shear stress/stress intensity factor) increases towards a critical value. We investigate the disorder-induced perturbations of the crack displacement field and crack energy, and use the results to determine the crack pinning force and to assess the shape of the critical crack. The analytical arguments are validated by comparison with simulations of interface cracking.

قيم البحث

اقرأ أيضاً

We explore the magnetic-field-driven motion of domain walls with different chiralities in thin ferromagnetic films made of Pt/Co/Pt, Au/Co/Pt, and Pt/Co/Au. From the analysis of domain wall dynamics, we extract parameters characterizing the interacti on between domain walls and weak pinning disorder of the films. The variations of domain wall structure, controlled by an in-plane field, are found to modify the characteristic length-scale of pinning in strong correlation with the domain wall width, whatever its chirality and the interaction strength between domain walls and pinning defects. These findings should be also relevant for a wide variety of elastic interfaces moving in weak pinning disordered media.
We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.
The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. A s-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with the O-rich CoO2 bulk termination of the (110) surface. Interface and bulk film structure are found to improve significantly with post-growth annealing at 820 K in air and display sharp rectangular LEED patterns, suggesting a surface stoichiometry of the alternative Co2O2 bulk termination of the (110) surface. Non-contact atomic force microscopy demonstrates the presence of wide terraces separated by atomic steps in the annealed films that are not present in the as-grown structures; the step height of ~ 2.7 A corresponds to two atomic layers and confirms a single termination for the annealed films, consistent with the LEED results. A model of the (1 * 1) surfaces that allows for compensation of the polar surfaces is presented.
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The E B process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا