اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMagnetically tunable dielectric materials
165
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The coupling between localized spins and phonons can lead to shifts in the dielectric constant of insulating materials at magnetic ordering transitions. Studies on isostructural SeCuO3 (ferromagnetic) and TeCuO3 (antiferromagnetic) illustrate how the q-dependent spin-spin correlation function couples to phonon frequencies leading to a shift in the dielectric constant. A model is discussed for this spin-phonon coupling. The magnetodielectric coupling in multiferroic materials can be very large at a ferroelectric transition temperature. This coupling is investigated in the recently identified multiferroic Ni3V2O8.
قيم البحث
اقرأ أيضاً
The first observation of tungsten disulfide liquid crystalline nanocomposites in dispersions of liquid phase-exfoliated flakes is demonstrated in a range of organic solvents. The nanocomposites demonstrate significant birefringence and reconfigurable
optical chirality as observed in the linear and circular dichroism measurements respectively. Under an applied magnetic field of +/-1.5T the chirality can be switched ON/OFF, while the wavelength range for switching can be tuned from large to narrow range by the proper selection of the host solvent. In combination with photoluminescence capabilities of WS2, this opens a pathway to a wide variety of applications, such as deposition of highly uniform films over large areas for photovoltaic devices, as shown here.
We derive a dielectric-dependent hybrid functional which accurately describes the electronic properties of heterogeneous interfaces and surfaces, as well as those of three- and two-dimensional bulk solids. The functional, which does not contain any a
djustable parameter, is a generalization of self-consistent hybrid functionals introduced for homogeneous solids, where the screened Coulomb interaction is defined using a spatially varying, local dielectric function. The latter is determined self-consistently using density functional calculations in finite electric fields. We present results for the band gaps and dielectric constants of 3D and 2D bulk materials, and band offsets for interfaces, showing an accuracy comparable to that of GW calculations.
Searching for novel two-dimensional (2D) materials is crucial for the development of the next generation technologies such as electronics, optoelectronics, electrochemistry and biomedicine. In this work, we designed a series of 2D materials based on
endohedral fullerenes, and revealed that many of them integrate different functions in a single system, such as ferroelectricity with large electric dipole moments, multiple magnetic phases with both strong magnetic anisotropy and high Curie temperature, quantum spin Hall effect or quantum anomalous Hall effect with robust topologically protected edge states. We further proposed a new style topological field-effect transistor. These findings provide a strategy of using fullerenes as building blocks for the synthesis of novel 2D materials which can be easily controlled with a local electric field.
We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ r
edox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rodel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.
In the present work we demonstrate that in addition to the well-known colossal-dielectric-constant material CaCu3Ti4O12 also various members of the series Ln2/3Cu3Ti4O12 with Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm, exhibit giant value
s of the dielectric constant. Just as CaCu3Ti4O12, all these materials show a Maxwell-Wagner type relaxation process. For the best material, Pr2/3Cu3Ti4O12, we provide a detailed investigation of its dielectric properties in a broad frequency range up to 1 GHz. Polarization at internal barriers, most likely grain boundaries, seems to be the reason for the observed very high values of the dielectric constant. Taking into account the present results and those reported in literature
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
