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We report the evolution of superconducting properties as a function of disorder in homogeneously disordered epitaxial NbN thin films grown on (100) MgO substrates, studied through a combination of electrical transport, Hall Effect and tunneling measurements. The thickness of all our films are >50nm much larger than the coherence length ~5nm. The effective disorder in different films encompasses a large range, with the Ioffe-Regel parameter varying in the range kFl~1.38-8.77. Tunneling measurements on films with different disorder reveals that for films with large disorder the bulk superconducting transition temperature (Tc) is not associated with a vanishing of the superconducting energy gap, but rather a large broadening of the superconducting density of states. Our results provide strong evidence of the loss of superconductivity via phase-fluctuations in a disordered s-wave superconductor.
We study suppression of superconductivity by disorder in d-wave superconductors, and predict the existence of (at least) two sequential low temperature transitions as a function of increasing disorder: a d -wave to -wave, and then an s-wave to metal
We investigate the effect of thermal fluctuations on the two-particle spectral function for a disordered $s$-wave superconductor in two dimensions, focusing on the evolution of the collective amplitude and phase modes. We find three main effects of t
We show that while orbital magnetic field and disorder, acting individually weaken superconductivity, acting together they produce an intriguing evolution of a two-dimensional type-II s-wave superconductor. For weak disorder, the critical field H_c a
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean pa
We study the superconducting proximity effect between a conventional semiconductor and a disordered s-wave superconductor. We calculate the effective momentum relaxation rate in the semiconductor due to processes involving electron tunneling into a d