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Microfabricated Chip Traps for Ions

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 نشر من قبل Jason Amini
 تاريخ النشر 2008
  مجال البحث فيزياء
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This submission is an introduction to microfabricated ion traps. We cover the basics of Paul traps, various geometries for realizing the traps, a number of design considerations, and, finally, a review of existing microfabricated traps.



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Ion traps offer the opportunity to study fundamental quantum systems with high level of accuracy highly decoupled from the environment. Individual atomic ions can be controlled and manipulated with electric fields, cooled to the ground state of motio n with laser cooling and coherently manipulated using optical and microwave radiation. Microfabricated ion traps hold the advantage of allowing for smaller trap dimensions and better scalability towards large ion trap arrays also making them a vital ingredient for next generation quantum technologies. Here we provide an introduction into the principles and operation of microfabricated ion traps. We show an overview of material and electrical considerations which are vital for the design of such trap structures. We provide guidance in how to choose the appropriate fabrication design, consider different methods for the fabrication of microfabricated ion traps and discuss previously realized structures. We also discuss the phenomenon of anomalous heating of ions within ion traps, which becomes an important factor in the miniaturization of ion traps.
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State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-gr id array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with $^{40}$Ca$^+$ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with $^{171}$Yb$^+$ ions in a second BGA trap.
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