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Vortices in superconductors driven at microwave frequencies exhibit a response related to the interplay between the vortex viscosity, pinning strength, and flux creep effects. At the same time, the trapping of vortices in superconducting microwave resonant circuits contributes excess loss and can result in substantial reductions in the quality factor. Thus, understanding the microwave vortex response in superconducting thin films is important for the design of such circuits, including superconducting qubits and photon detectors, which are typically operated in small, but non-zero, magnetic fields. By cooling in fields of the order of 100 $mu$T and below, we have characterized the magnetic field and frequency dependence of the microwave response of a small density of vortices in resonators fabricated from thin films of Re and Al, which are common materials used in superconducting microwave circuits. Above a certain threshold cooling field, which is different for the Re and Al films, vortices become trapped in the resonators. Vortices in the Al resonators contribute greater loss and are influenced more strongly by flux creep effects than in the Re resonators. This different behavior can be described in the framework of a general vortex dynamics model.
The precondition for the BKT transition in thin superconducting films, the logarithmic intervortex interaction, is satisfied at distances short relative to $Lambda=2lambda^2/d$, $lambda$ is the London penetration depth of the bulk material and $d$ is
We use a scanning nanometer-scale superconducting quantum interference device (SQUID) to image individual vortices in amorphous superconducting MoSi thin films. Spatially resolved measurements of the magnetic field generated by both vortices and Meis
The microwave response of high quality niobium films in a perpendicular static magnetic field has been investigated. The complex frequency shift was measured up to the upper critical fields. The data have been analyzed by the effective conductivity m
The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the
The carrier concentration of Tl2Ba2CaCu2O8 films was modified by annealing in N2 gas. X-ray analysis of the structure and the oxygen content revealed a correspondence between carrier concentration and oxygen depletion. The TC and nonlinear surface im