اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEnhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor
420
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $Delta V$ at the interface as high as 1.2mV for a current density of 0.34 nA.$mu m^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.
قيم البحث
اقرأ أيضاً
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed
by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI) layers wi
th arbitrary magnetization. The aim of this study is twofold: On the one hand, we present a theoretical framework based on the quasiclassical Greens functions to calculate the Josephson and quasiparticle current through the junctions in terms of the different parameters characterizing it. Our theory predicts qualitative new results for the tunneling differential conductance, $dI/dV$, when the spin-splitting fields of the two superconductors are non-collinear. We also discuss how junctions based on FI/S can be used to realize anomalous Josephson junctions with a constant geometric phase shift in the current-phase relation. As a result, they may exhibit spontaneous triplet supercurrents in the absence of a phase difference between the S electrodes. On the other hand, we show results of planar tunneling spectroscopy of a EuS/Al/Al$_2$O$_3$/EuS/Al junction and use our theoretical model to reproduce the obtained $dI/dV$ curves. Comparison between theory and experiment reveals information about the intrinsic parameters of the junction, such as the size of the superconducting order parameter, spin-splitting fields and spin relaxation, and also about properties of the two EuS films, as their morphology, domain structure, and magnetic anisotropy.
Spin-polarized quasiparticles can be easily created during spin-filtering through a ferromagnetic insulator (FI) in contact with a superconductor due to pair breaking effects at the interface. A combination FI-N-FI sandwiched between two superconduct
ors can be used to create and analyze such spin-polarized quasiparticles through their nonequilibrium accumulation in the middle metallic (N) layer. We report spin-polarized quasiparticle regulation in a double spin-filter tunnel junction in the configuration NbN-GdN1-Ti-GdN2-NbN. The middle Ti layer provides magnetic decoupling between two ferromagnetic GdN and a place for nonequilibrium quasiparticle accumulation. The two GdN(1,2) layers were deposited under different conditions to introduce coercive contrast. The quasiparticle tunneling spectra has been measured at different temperatures to understand the tunneling mechanism in these double spin-filter junctions. The conductance spectra were found to be comparable to an asymmetric SINIS-type tunnel junction. A hysteretic R-H loop with higher resistance for the antiparallel configuration compared to parallel state was observed asserting the spin-polarized nature of quasiparticles. The hysteresis in the R-H loop was found to disappear for sub-gap bias current. This difference can be understood by considering suppression of the interlayer coupling due to nonequilibrium spin-polarized quasiparticle accumulation in the Ti layer.
First-principles density functional calculations demonstrate that a spin-polarized two-dimensional conducting state can be realized at the interface between two non-magnetic band insulators. The (001) surface of the diamagnetic insulator FeS2 (pyrite
) supports a localized surface state deriving from Fe d-orbitals near the conduction band minimum. The deposition of a few unit cells of the polar perovskite oxide LaAlO3 leads to electron transfer into these surface bands, thereby creating a conducting interface. The occupation of these narrow bands leads to an exchange splitting between the spin sub-bands, yielding a highly spin-polarized conducting state distinct from the rest of the non-magnetic, insulating bulk. Such an interface presents intriguing possibilities for spintronics applications.
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to t
he difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
