اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدElectronic conduction in a three-terminal molecular transistor
256
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field along the positive or negative direction. A small gate field is required to switch on the current in the proposed architecture. The changes in the electronic conduction can be attributed to the intrinsic dipolar molecular architecture in terms of the evolution of molecular wavefunctions, specifically the one associated with the terphenyl group of the modulating wire in the presence of the gate field.
قيم البحث
اقرأ أيضاً
We propose a thermal transistor based on a three-terminal normal-superconductor (NS) junction with superconductor terminal acting as the base. The emergence of heat amplification is due to the negative differential thermal conductance (NDTC) effect f
or the NS diode in which the normal side maintains a higher temperature. The temperature dependent superconducting energy gap is responsible for the NDTC. By controlling quantum dot levels and their coupling strengths to the terminals, a huge heat amplification factor can be achieved. The setup offers an alternative tuning scheme of heat amplification factor and may find use in cryogenic applications.
Heat conduction of a real quasi-one dimensional material, the finite length carbon nanowire (CNW), inserted into the single-walled carbon nanotube (SWNT) has been studied by the molecular dynamical (MD) method, in which both of the longitudinal as we
ll as transverse motions of the chain atoms in the SWNT have been permitted. It is found that the thermal conductivity $kappa $ of the carbon nanowire is very high at room temperature, and diverges more likely with the chain length logarithmically.
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipol
ar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.
Josephson transport through a single molecule or carbon nanotube is considered in the presence of a local vibrational mode coupled to the electronic charge. The ground-state solution is obtained exactly in the limit of a large superconducting gap, an
d is extended to the general case by variational analysis. Coherent charge fluctuations are entangled with non-classical phonon states. The Josephson current induces squeezing of the phonon mode, which is controlled by the superconducting phase difference and by the junction asymmetry. Optical probes of non-classical phonon states are briefly discussed.
Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically-protected q
uantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multi-terminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multi-terminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas (2DEG) proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage and magnetic field. We find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction (RCSJ) computational model.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
