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Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which co
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the mic
Recently, studies have been carried out on attempts to combine surface-enhanced Surface-enhanced Raman spectroscopy (SERS) substrates that can be based on either localized surface plasmon (LSP) or surface plasmon polaritons (SPP) structures. By combi
In nanostructure electronic devices, it is well-known that the optical lattice waves in the constituent semiconductor crystals have to obey both mechanical and electrical boundary conditions at an interface. The theory of hybrid optical modes, establ
Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to the weak int