اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدQuantum noise theory for quantum transport through nanostructures
107
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We develop a quantum noise approach to study quantum transport through nanostructures. The nanostructures, such as quantum dots, are regarded as artificial atoms, subject to quasi-equilibrium fermionic reservoirs of electrons in biased leads. Noise operators characterizing the quantum fluctuation in the reservoirs are related to the damping and fluctuation of the artificial atoms through the quantum Langevin equation. The average current and current noise are derived in terms of the reservoir noise correlations. In the white-noise limit, we show that the current and current noise can be exactly calculated by the quantum noise approach, even in the presence of interaction such as Coulomb blockade. As a typical application, the average current and current noise through a single quantum dot are studied.
قيم البحث
اقرأ أيضاً
We analyze the equilibrium and non-equilibrium frequency-dependent spin current noise and spin conductance through a quantum dot in the local moment regime. Spin current correlations are shown to behave markedly differently from charge correlations:
Equilibrium spin cross-correlations are suppressed at frequencies below the Kondo scale, and are characterized by a universal function that we determine numerically for zero temperature. For asymmetrical quantum dots dynamical spin accumulation resonance is found for frequencies of the order of the Kondo energy. At higher temperatures surprising low-frequency anomalies related to overall spin conservation appear.
We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the
occupation-state basis, despite widely used in many previous studies, is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots. In contrast, the calculations using the eigenstate basis are valid for an arbitrary interdot coupling. We show that the master equation in the occupation-state basis includes only the low-order terms with respect to the interdot coupling compared with the more accurate master equation in the eigenstate basis. Using realistic model parameters, we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small. Furthermore, properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the current. Our c
alculations are based on a master equation where quantum interference enters as non-diagonal elements of the density matrix of the double quantum dots. We also show that many results have a physically intuitive meaning when recasting our equations as Bloch-like equations for a pseudo spin associated with the dot occupation. In the perfectly symmetric configuration with equal tunnel couplings and orbital energies of both dots, there is no unique stationary state density matrix. Interestingly, however, adding arbitrarily small symmetry-breaking terms to the tunnel couplings or orbital energies stabilizes a stationary state either with or without quantum interference, depending on the competition between these two perturbations. The different solutions can correspond to very different current levels. Therefore, if the orbital energies and/or tunnel couplings are controlled by, e.g., electrostatic gating, the double quantum dot can act as an exceptionally sensitive electric switch.
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure tr
eatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation.
We investigate the propagation of spin impurity atoms through a strongly interacting one-dimensional Bose gas. The initially well localized impurities are accelerated by a constant force, very much analogous to electrons subject to a bias voltage, an
d propagate as a one-dimensional impurity spin wave packet. We follow the motion of the impurities in situ and characterize the interaction induced dynamics. We observe a very complex non-equilibrium dynamics, including the emergence of large density fluctuations in the remaining Bose gas, and multiple scattering events leading to dissipation of the impuritys motion.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
