Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

We consider the electronic properties of ferromagnetic bulk GaMnAs at zero temperature using two realistic tight-binding models, one due to Tang and Flatte and one due to Masek. In particular, we study the density of states, the Fermi energy, the inverse participation ratio, and the optical conductivity with varying impurity concentration x=0.01-0.15. The results are very sensitive to the assumptions made for the on-site and hopping matrix elements of the Mn impurities. For low concentrations, x<0.02, Maseks model shows only small deviations from the case of p-doped GaAs with increased number of holes while within Tang and Flattes model an impurity-band forms. For higher concentrations x, Maseks model shows minor quantitative changes in the properties we studied while the results of the Tang and Flatte model exhibit qualitative changes including strong localization of eigenstates with energies close to the band edge. These differences between the two approaches are in particular visible in the optical conductivity, where Maseks model shows a Drude peak at zero frequency while no such peak is observed in Tang and Flattes model. Interestingly, although the two models differ qualitatively the calculated effective optical masses of both models are similar within the range of 0.4-1.0 of the free electron mass.