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تسجيل مستخدم جديدSpin, Orbital and Charge Order at the Interface between Correlated Oxides
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The collective behavior of correlated electrons in the VO$_2-$interface layer of LaVO$_3$/SrTiO$_3$ heterostructure is studied within a quarter-filled $t_{2g}$-orbital Hubbard model on a square lattice. We argue that the ground state is ferromagnetic driven by the double exchange mechanism, and is orbitally and charge ordered due to a confined geometry and electron correlations. The orbital and charge density waves open gaps on the entire Fermi surfaces of all orbitals. The theory explains the observed insulating behavior of the $p$-type interface between LaVO$_3$ and SrTiO$_3$.
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To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic
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We report a ground state with strongly coupled magnetic and charge density wave orders mediated via orbital ordering in the layered compound tbt. In addition to the commensurate antiferromagnetic (AFM) and charge density wave (CDW) orders, new magnet
ic peaks are observed whose propagation vector equals the sum of the AFM and CDW propagation vectors, revealing an intricate and highly entwined relationship. This is especially interesting given that the magnetic and charge orders lie in different layers of the crystal structure where the highly localized magnetic moments of the Tb$^{3+}$ ions are netted in the Tb-Te stacks, while the charge order is formed by the conduction electrons of the adjacent Te-Te layers. Our results, based on neutron diffraction and resonant x-ray scattering reveal that the charge and magnetic subsystems mutually influence each other via the orbital ordering of Tb$^{3+}$ ions.
In complex materials observed electronic phases and transitions between them often involves coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such pr
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