اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدScreening, Kohn anomaly, Friedel oscillation, and RKKY interaction in bilayer graphene
95
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We calculate the screening function in bilayer graphene (BLG) both in the intrinsic (undoped) and the extrinsic (doped) regime within random phase approximation, comparing our results with the corresponding single layer graphene (SLG) and the regular two dimensional electron gas (2DEG). We find that the Kohn anomaly is strongly enhanced in BLG. We also discuss the Friedel oscillation and the RKKY interaction, which are associated with the non-analytic behavior of the screening function at $q=2k_F$. We find that the Kohn anomaly, the Friedel oscillation, and the RKKY interaction are all qualitatively different in the BLG compared with the SLG and the 2DEG.
قيم البحث
اقرأ أيضاً
We investigate the effect of the mass anisotropy on Friedel Oscillations, Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, screening properties, and Boltzmann transport in two dimensional (2D) metallic and doped semiconductor systems. We calculate t
he static polarizability and the dielectric function within the random phase approximation with the mass anisotropy fully taken into account without making any effective isotropic approximation in the theory. We find that carrier screening exhibits an isotropic behavior for small momenta despite the anisotropy of the system, and becomes strongly anisotropic above a certain threshold momentum. Such an anisotropy of screening leads to anisotropic Friedel oscillations, and an anisotropic RKKY interaction characterized by a periodicity dependent on the direction between the localized magnetic moments. We also explore the disorder limited dc transport properties in the presence of mass anisotropy based on the Boltzmann transport theory. Interestingly, we find that the anisotropy ratio of the short range disorder limited resistivity along the heavy- and light-mass directions is always the same as the mass anisotropy ratio whereas for the long range disorder limited resistivity the anisotropy ratio is the same as the mass ratio only in the low density limit, and saturates to the square root of the mass ratio in the high density limit. Our theoretical work should apply to many existing and to-be-discovered anisotropic 2D systems.
The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carrier
s, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. However, due to the weak EPI strength, most phenomena have focused on electronic properties rather than on phonon properties. One prominent exception is the Kohn anomaly, where phonon softening can emerge when the phonon wavevector nests the Fermi surface of metals. Here we report a new class of Kohn anomaly in a topological Weyl semimetal (WSM), predicted by field-theoretical calculations, and experimentally observed through inelastic x-ray and neutron scattering on WSM tantalum phosphide (TaP). Compared to the conventional Kohn anomaly, the Fermi surface in a WSM exhibits multiple topological singularities of Weyl nodes, leading to a distinct nesting condition with chiral selection, a power-law divergence, and non-negligible dynamical effects. Our work brings the concept of Kohn anomaly into WSMs and sheds light on elucidating the EPI mechanism in emergent topological materials.
The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, populat
ion inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.
The interplay of electron-phonon (el-ph) and electron-electron (el-el) interactions in epitaxial graphene is studied by directly probing its electronic structure. We found a strong coupling of electrons to the soft part of the A1g phonon evident by a
kink at 150+/-15 meV, while the coupling of electrons to another expected phonon E2g at 195 meV can only be barely detected. The possible role of the el-el interaction to account for the enhanced coupling of electrons to the A1g phonon, and the contribution of el-ph interaction to the linear imaginary part of the self energy at high binding energy are also discussed. Our results reveal the dominant role of the A1g phonon in the el-ph interaction in graphene, and highlight the important interplay of el-el and el-ph interactions in the self energy of graphene.
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the f
abricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the order of 10E-23 - 10E-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at the frequencies below 10 -100 Hz indicates that the noise is of the carrier - number fluctuation origin due to the carrier trapping by defects. The Hooge parameter of 10E-4 was extracted for this type of devices. The gate dependence of the noise spectral density suggests that the noise is dominated by the contributions from the ungated part of the device channel and by the contacts. The obtained results are important for graphene electronic applications.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
