ترغب بنشر مسار تعليمي؟ اضغط هنا

Near-Zero Moment Ferromagnetism in the Semiconductor SmN

214   0   0.0 ( 0 )
 نشر من قبل Andrew Preston
 تاريخ النشر 2008
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The magnetic behaviour of SmN has been investigated in stoichiometric polycrystalline films. All samples show ferromagnetic order with Curie temperature (T_c) of 27 +/- 3 K, evidenced by the occurrence of hysteresis below T_c. The ferromagnetic state is characterised by a very small moment and a large coercive field, exceeding even the maximum applied field of 6 T below about 15 K. The residual magnetisation at 2 K, measured after cooling in the maximum field, is 0.035 mu_B per Sm. Such a remarkably small moment results from a near cancellation of the spin and orbital contributions for Sm3+ in SmN. Coupling to an applied field is therefore weak, explaining the huge coercive field . The susceptibility in the paramagnetic phase shows temperature-independent Van Vleck and Curie-Weiss contributions. The Van Vleck contribution is in quantitative agreement with the field-induced admixture of the J=7/2 excited state and the 5/2 ground state. The Curie-Weiss contribution returns a Curie temperature that agrees with the onset of ferromagnetic hysteresis, and a conventional paramagnetic moment with an effective moment of 0.4 mu_B per Sm ion, in agreement with expectations for the crystal-field modified effective moment on the Sm3+ ions.



قيم البحث

اقرأ أيضاً

Magnetic semiconductors have attracted interest because of the question of how a magnetic metal can be derived from a paramagnetic insulator. Here our approach is to carrier dope insulating FeSi and we show that the magnetic half-metal which emerges has unprecedented optical properties, unlike those of other low carrier density magnetic metals. All traces of the semiconducting gap of FeSi are obliterated and the material is unique in being less reflective in the ferromagnetic than in the paramagnetic state, corresponding to larger rather than smaller electron scattering in the ordered phase.
Narrow-gap higher mobility semiconducting alloys In_{1-x}Mn_{x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_{0.98}Mn_{0.02}Sb was detected by the observat ion of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2K) within a cluster.
We report results of a muon spin rotation and relaxation ($mu$SR) study of dilute Pd$_{1-x}$Ni$_x$ alloys, with emphasis on Ni concentrations $x =$ 0.0243 and 0.025. These are close to the critical value $x_mathrm{cr}$ for the onset of ferromagnetic long-range order (LRO), which is a candidate for a quantum critical point. The 2.43 and 2.5 at.% Ni alloys exhibit similar $mu$SR properties. Both samples are fully magnetic, with average muon local fields $langle B^mathrm{loc}rangle =$ 2.0 and 3.8 mT and Curie temperatures $T_C =$ 1.0 and 2.03 K for 2.43 and 2.5 at.% Ni, respectively, at $T = 0$. The temperature dependence of $langle B^mathrm{loc}rangle$ suggests ordering of Ni spin clusters rather than isolated spins. Just above $T_C$ a two-phase region is found with separate volume fractions of quasistatic short-range order (SRO) and paramagnetism. The SRO fraction decreases to zero with increasing temperature a few kelvin above $T_C$. This mixture of SRO and paramagnetism is consistent with the notion of an inhomogeneous alloy with Ni clustering. The measured values of $T_C$ extrapolate to $x_mathrm{cr}$ = 0.0236 $pm$ 0.0027. The dynamic muon spin relaxation in the vicinity of $T_C$ differs for the two samples: a relaxation-rate maximum at $T_C$ is observed for $x$ = 0.0243, reminiscent of critical slowing down, whereas for $x =$ 0.025 no dynamic relaxation is observed within the $mu$SR time window. The data suggest a mean-field-like transition in this alloy.
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.
The rare-earth nitride ferromagnetic semiconductors owe their varying magnetic properties to the progressive filling of 4f shell across the series. Recent electrical transport measurements on samarium nitride, including the observation of superconduc tivity, have been understood in terms of a contribution from a 4f transport channel. Band structure calculations generally locate an empty majority 4f-band within the conduction band although over a wide range of possible energies. Here we report optical reflection and transmission measurements on samarium nitride between 0.01 eV to 4 eV, that demonstrate clearly that the 4f band forms the bottom of the conduction band. Results at the lowest energies show no free carrier absorption, indicating a semiconducting ground state, and supporting earlier conclusions based on transport measurements.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا