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A Fabry-Perot-type interferometer is experimentally realized for electrons in a semiconductor device. A special experimental geometry creates interference conditions for co-propagating electrons in quantum Hall edge states, which results in oscillations of the current through the device. The visibility of these oscillations is found to increase at the high-field edge of the quantum Hall plateau.
A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposi
We investigate nonlinear transport in electronic Fabry-Perot interferometers in the integer quantum Hall regime. For interferometers sufficiently large that Coulomb blockade effects are absent, a checkerboard-like pattern of conductance oscillations
The advent of few-layer graphenes has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The multiple carbon sublattices endow the electronic wavefunctions with pseudo
We investigate a Fabry-Perot interferometer in the integer Hall regime in which only one edge channel is transmitted and n channels are trapped into the interferometer loop. Addressing recent experimental observations, we assume that Coulomb blockade
We propose an intrinsic 3D Fabry-Perot type interferometer, coined higher-order interferometer, that utilizes the chiral hinge states of second-order topological insulators and cannot be equivalently mapped to 2D space because of higher-order topolog