ترغب بنشر مسار تعليمي؟ اضغط هنا

Anisotropic magnetoresistance involves metal-insulator transition in single crystal La0.77Ca0.23MnO3

85   0   0.0 ( 0 )
 نشر من قبل Wanjun Jiagn
 تاريخ النشر 2008
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The paper has been withdrawn for some reasons

قيم البحث

اقرأ أيضاً

We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic c haracter. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion ), Anderson (localization via disorder) and Peierls (localization via distortion of a periodic 1D lattice). One additional route to a MIT proposed by Slater, in which long-range magnetic order in a three dimensional system drives the MIT, has received relatively little attention. Using neutron and X-ray scattering we show that the MIT in NaOsO3 is coincident with the onset of long-range commensurate three dimensional magnetic order. Whilst candidate materials have been suggested, our experimental methodology allows the first definitive demonstration of the long predicted Slater MIT. We discuss our results in the light of recent reports of a Mott spin-orbit insulating state in other 5d oxides.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly dependent on strain. It is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.
The modulation of charge density and spin order in (LaMnO$_3$)$_{2n}$/(SrMnO$_3$)$_n$ ($n$=1-4) superlattices is studied via Monte Carlo simulations of the double-exchange model. G-type antiferromagnetic barriers in the SrMnO$_{3}$ regions with low c harge density are found to separate ferromagnetic LaMnO$_{3}$ layers with high charge density. The recently experimentally observed metal-insulator transition with increasing $n$ is reproduced in our studies, and $n=3$ is found to be the critical value.
106 - X. Z. Xing , C. Q. Xu , N. Zhou 2017
Materials exhibiting large magnetoresistance may not only be of fundamental research interest, but also can lead to wide-ranging applications in magnetic sensors and switches. Here we demonstrate a large linear-in-field magnetoresistance, $Delta rho/ rho$ reaching as high as $sim$600$%$ at 2 K under a 9 Tesla field, in the tetragonal phase of a transiton-metal stannide $beta$-RhSn$_4$. Detailed analyses show that its magnetic responses are overall inconsistent with the classical model based on the multiple electron scattering by mobility fluctuations in an inhomogenous conductor, but rather in line with the quantum effects due to the presence of Dirac-like dispersions in the electronic structure. Our results may help guiding the future quest for quantum magnetoresistive materials into the family of stannides, similar to the role played by PtSn$_4$ with topological node arcs.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا