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We report on the influence of the improved L21 ordering degree on the magnetic properties of Co2MnSi Heusler films. Different fractions of the L21 phase are obtained by different post-growth annealing temperatures ranging from 350 degC to 500 degC. Room temperature magneto-optical Kerr effect measurements reveal an increase of the coercivity at an intermediate annealing temperature of 425 degC, which is a fingerprint of an increased number of pinning centers at this temperature. Furthermore, Brillouin light scattering studies show that the improvement of the L21 order in the Co2MnSi films is correlated with a decrease of the saturation magnetization by about 9%. The exchange stiffness constant of Co2MnSi, however, increases by about 8% when the L21 order is improved. Moreover, we observe a drop of the cubic anisotropy constant K1 by a factor of 10 for an increasing amount of the L21 phase.
The physical properties of Fe2CoAl (FCA) Heusler alloy are systematically investigated using the first-principles calculations within generalized gradient approximation (GGA) and GGA+U. The influence of atomic ordering with respect to the Wyckoff sit
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process
Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several epitaxial domai
We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$) increases fr