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Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors (S). Each region is modelled as a single band in tight-binding approximation in order to understand the formation of the tunneling current as clearly as possible. The tunneling process itself is simulated by a hybridization between the lead and insulator conduction bands. The insulator is assumed to have localized moments which can interact with the tunneling electrons. This is described by the Kondo Lattice Model (KLM) and treated within an interpolating self-energy approach. For the superconductor the mean-field BCS theory is used. The spin polarization of the current shows a strong dependence both on the applied voltage and the properties of the materials. Even for this idealized three band model there is a qualitative agreement with experiment.
We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y$_3$Fe$_5$O$_{12}$ (YIG). The direction of the YIG magnetizati
The physics of a junction composed of a normal metal, quantum dot and 2D topological insulator (in a quantum spin Hall state) is elucidated. It maifests a subtle combination of Kondo correlations and quantum spin Hall edge states moving on the opposi
We employ matrix-product state techniques to numerically study the zero-temperature spin transport in a finite spin-1/2 XXZ chain coupled to fermionic leads with a spin bias voltage. Current-voltage characteristics are calculated for parameters corre
Using inhomogeneous dynamical mean-field theory, we argue that the normal-metal proximity effect forces any finite number of barrier planes that are described by the (paramagnetic) Hubbard model and sandwiched between semi-infinite metallic leads to
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of