ترغب بنشر مسار تعليمي؟ اضغط هنا

Geometrical dependence of decoherence by electronic interactions in a GaAs/GaAlAs square network

36   0   0.0 ( 0 )
 نشر من قبل Christophe Texier
 تاريخ النشر 2008
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We investigate weak localization in metallic networks etched in a two dimensional electron gas between $25:$mK and $750:$mK when electron-electron (e-e) interaction is the dominant phase breaking mechanism. We show that, at the highest temperatures, the contributions arising from trajectories that wind around the rings and trajectories that do not are governed by two different length scales. This is achieved by analyzing separately the envelope and the oscillating part of the magnetoconductance. For $Tgtrsim0.3:$K we find $Lphi^mathrm{env}propto{T}^{-1/3}$ for the envelope, and $Lphi^mathrm{osc}propto{T}^{-1/2}$ for the oscillations, in agreement with the prediction for a single ring cite{LudMir04,TexMon05}. This is the first experimental confirmation of the geometry dependence of decoherence due to e-e interaction.

قيم البحث

اقرأ أيضاً

79 - C. Naud , G. Faini , D. Mailly 2001
Aharonov-Bohm oscillations have been observed in a lattice formed by a two dimensional rhombus tiling. This observation is in good agreement with a recent theoretical calculation of the energy spectrum of this so-called T3 lattice. We have investigat ed the low temperature magnetotransport of the T3 lattice realized in the GaAlAs/GaAs system. Using an additional electrostatic gate, we have studied the influence of the channel number on the oscillations amplitude. Finally, the role of the disorder on the strength of the localization is theoretically discussed.
134 - J. T. Chalker , Yuval Gefen , 2007
We develop a theoretical description of a Mach-Zehnder interferometer built from integer quantum Hall edge states, with an emphasis on how electron-electron interactions produce decoherence. We calculate the visibility of interference fringes and noi se power, as a function of bias voltage and of temperature. Interactions are treated exactly, by using bosonization and considering edge states that are only weakly coupled via tunneling at the interferometer beam-splitters. In this weak-tunneling limit, we show that the bias-dependence of Aharonov-Bohm oscillations in source-drain conductance and noise power provides a direct measure of the one-electron correlation function for an isolated quantum Hall edge state. We find the asymptotic form of this correlation function for systems with either short-range interactions or unscreened Coulomb interactions, extracting a dephasing length $ell_{phi}$ that varies with temperature $T$ as $ell_{phi} propto T^{-3}$ in the first case and as $ell_{phi} propto T^{-1} ln^2(T)$ in the second case.
We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by the atomic saw method from original quantum-well 2 D superlattices, underwent substantial modifications of their energy bands built up on the X-states of the bulk. We have calculated the band structure by a finite element method and we have studied the various miniband structures built up of the masses m_t and m_l of GaAs and AlAs at the point X. From an experimental point of view, the main result is that in the 2D case we observe only resonances when the magnetic field B is applied along the growth axis whereas in the 1D case we obtain resonances in all magnetic field configurations. The analysis of the maxima (or minima for B // E) in the resistivity rho_xy as a function of B allows us to account, qualitatively and semi-quantitatively, for the band structure theoretically expected.
154 - Mahdi Hajlaoui 2021
Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their elec tronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaged in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low energy ARPES (photon energy $sim$ 7 eV) to increase its depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples properties required to perform extremely low energy ARPES experiments on electronic states buried in semiconductor heterostructures.
We study electronic transport in long DNA chains using the tight-binding approach for a ladder-like model of DNA. We find insulating behavior with localizaton lengths xi ~ 25 in units of average base-pair seperation. Furthermore, we observe small, bu t significant differences between lambda-DNA, centromeric DNA, promoter sequences as well as random-ATGC DNA.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا